Beilstein J. Nanotechnol.2021,12, 984–994, doi:10.3762/bjnano.12.74
p-type Si by measuring I–V and C–V characteristics. The fabricated Au/CuNiCoS4/p-Sidevice exhibited good rectifying properties, high photoresponse activity, low series resistance, and high shunt resistance. The C–V characteristics revealed that capacitance and conductance of the photodiode are
voltage-and frequency-dependent. The fabricated device with CuNiCoS4 thiospinel nanocrystals can be employed in high-efficiency optoelectronic applications.
Keywords: Au/CuNiCoS4/p-Sidevice; CuNiCoS4; optoelectronic applications; Schottky devices; Introduction
Recently, spinel materials have attracted
transition [8]. The bandgap was determined as 1.66 eV by extrapolating the linear portion of the band energy graph given in Figure 3b.
Electrical properties
In order to determine the electrical performance of the Au/CuNiCoS4/p-Sidevice, I–V measurements were performed on the photodiode in the dark and under
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Figure 1:
(a) Schematic illustration and (b) band diagram of the fabricated Au/CuNiCoS4/p-Si photodiode.